Sensitivity of CoSi{sub 2} precipitation in silicon to extra-low dopant concentrations. II. First-principles calculations

Journal Article · Wed Jan 28 00:00:00 EST 2015 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4906403· OSTI ID:22413021

Borodin, V. A. ^[1]; Ganchenkova, M. G. ^[2]; Ruault, M. -O.; Fortuna, F. ^[3]

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1. NRC “Kurchatov Institute,” Kurchatov Sq., 1, 123182 Moscow (Russian Federation)
2. Department of Physical Problems of Materials Science, National Research Nuclear University MEPhI, 115409 Moscow (Russian Federation)
3. Centre de Sciences Nucléaires et de Sciences de la Matière, bâtiment 108, 91405 Orsay Campus (France)

The paper is the second part of the study on the influence of very low dopant content in silicon on CoSi{sub 2} precipitation during high-temperature cobalt ion implantation into transmission electron microscope samples. It deals with the computational justification of various assumptions used in Paper I when rationalizing the kinetics of cobalt clustering in ion-implanted intrinsic silicon (both undoped and containing low concentrations of phosphorus atoms). In particular, it is proven that divacancies are efficient nucleation centers for the new Co-Si phase. It is shown that the capture of vacancies and divacancies on phosphorus atoms increases their lifetime in silicon matrix, but practically does not affect the mechanism of their interaction with interstitial cobalt atoms. Finally, it is demonstrated that the mobility of phosphorus interstitials at temperatures of our experiment is orders of magnitude higher than might be expected from the published literature data.

• OSTI ID: 22413021
• Journal Information: Journal of Applied Physics, Vol. 117, Issue 4; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CAPTURE
COBALT
COBALT IONS
COBALT SILICIDES
CONCENTRATION RATIO
INDIUM IONS
INTERSTITIALS
ION IMPLANTATION
LIFETIME
MATRIX MATERIALS
NUCLEATION
PHOSPHORUS
PRECIPITATION
SILICON
TEMPERATURE DEPENDENCE
TRANSMISSION ELECTRON MICROSCOPY
VACANCIES