Nucleation and growth of cobalt disilicide precipitates during in-situ transmission electron microscopy implantation.
The paper is aimed at getting deeper insight into the fundamental mechanisms that govern CoSi{sub 2} precipitate nucleation and growth during Co ion implantation at high temperatures (500-650 C). Information about nucleation and growth of metal silicides as a function of temperature and implantation flux is provided by experiments on cobalt implantation in silicon, performed directly by in situ transmission electron microscopy. The main attention is paid to the nucleation of B-type precipitates, which dominate under ion implantation conditions. The obtained quantitative behavior of precipitate number density and size and the scaling of these values with implantation flux are discussed and rationalized in terms of analytical and simulation approaches. An atomistic model of B-type precipitate nucleation based on the first-principles calculations of relative energetic efficiency of different Co clusters is proposed.
- Research Organization:
- Argonne National Lab. (ANL), Argonne, IL (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC); French-Russian Cooperative Project; Bilateral French-US Collaboration
- DOE Contract Number:
- DE-AC02-06CH11357
- OSTI ID:
- 937016
- Report Number(s):
- ANL/MSD/JA-62255; JAPIAU; TRN: US200820%%392
- Journal Information:
- J. Appl. Phys., Vol. 104, Issue 2008; ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- ENGLISH
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