Terahertz electromodulation spectroscopy of electron transport in GaN

Journal Article · Mon Mar 02 00:00:00 EST 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4914326· OSTI ID:22412755

Engelbrecht, S. G.; Arend, T. R.; Zhu, T.; Kappers, M. J. ^[1]

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1. Department of Materials Science and Metallurgy, University of Cambridge, Cambridge CB3 0FS (United Kingdom)

Time-resolved terahertz (THz) electromodulation spectroscopy is applied to investigate the high-frequency transport of electrons in gallium nitride at different doping concentrations and densities of threading dislocations. At THz frequencies, all structures reveal Drude transport. The analysis of the spectral response provides the fundamental transport properties, such as the electron scattering time and the electrons' conductivity effective mass. We observe the expected impact of ionized-impurity scattering and that scattering at threading dislocations only marginally affects the high-frequency mobility.

• OSTI ID: 22412755
• Journal Information: Applied Physics Letters, Vol. 106, Issue 9; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CARRIER MOBILITY
CONCENTRATION RATIO
DISLOCATIONS
EFFECTIVE MASS
ELECTRIC CONDUCTIVITY
ELECTRONS
GALLIUM NITRIDES
SCATTERING
SPECTRAL RESPONSE
SPECTROSCOPY
TIME RESOLUTION