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Title: Terahertz electromodulation spectroscopy of electron transport in GaN

Time-resolved terahertz (THz) electromodulation spectroscopy is applied to investigate the high-frequency transport of electrons in gallium nitride at different doping concentrations and densities of threading dislocations. At THz frequencies, all structures reveal Drude transport. The analysis of the spectral response provides the fundamental transport properties, such as the electron scattering time and the electrons' conductivity effective mass. We observe the expected impact of ionized-impurity scattering and that scattering at threading dislocations only marginally affects the high-frequency mobility.
Authors:
; ;  [1] ; ;  [2]
  1. Photonics and Optoelectronics Group, Physics Department and Center for NanoScience (CeNS), Ludwig-Maximilians-Universit√§t, Amalienstr. 54, 80799 M√ľnchen (Germany)
  2. Department of Materials Science and Metallurgy, University of Cambridge, Cambridge CB3 0FS (United Kingdom)
Publication Date:
OSTI Identifier:
22412755
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 9; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CARRIER MOBILITY; CONCENTRATION RATIO; DISLOCATIONS; EFFECTIVE MASS; ELECTRIC CONDUCTIVITY; ELECTRONS; GALLIUM NITRIDES; SCATTERING; SPECTRAL RESPONSE; SPECTROSCOPY; TIME RESOLUTION