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Title: Simulation of micro-magnet stray-field dynamics for spin qubit manipulation

High-fidelity control and unprecedented long dephasing times in silicon-based single spin qubits have recently confirmed the prospects of solid-state quantum computation. We investigate the feasibility of using a micro-magnet stray field for all-electrical, addressable spin qubit control in a Si/SiGe double quantum dot. For a micro-magnet geometry optimized for high Rabi-frequency, addressability, and robustness to fabrication misalignment as previously demonstrated by Yoneda et al. [Phys. Rev. Lett. 113, 267601 (2014)], we simulate the qubit decoherence due to magnetic stray-field fluctuations, which may dominate in nuclear spin-free systems, e.g., quantum dots in Si/SiGe, Si-MOS structures and (bilayer) graphene. With calculated Rabi-frequencies of 15 MHz, a qubit addressability error below 10{sup −3} is achievable. Magnetic fluctuations from a micro-magnet limits the spin relaxation time to T{sub 1} ≳ 3 s, while pure spin dephasing is negligible. Our results show that micro-magnets are a promising tool for spin qubit computation in nuclear spin-free systems.
Authors:
;  [1]
  1. Quantum Technology Group, JARA-Institute for Quantum Information, RWTH Aachen University, 52056 Aachen (Germany)
Publication Date:
OSTI Identifier:
22410209
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 117; Journal Issue: 19; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 77 NANOSCIENCE AND NANOTECHNOLOGY; CALCULATION METHODS; FLUCTUATIONS; GERMANIUM SILICIDES; GRAPHENE; LAYERS; MAGNETS; MHZ RANGE; QUANTUM COMPUTERS; QUANTUM DOTS; QUBITS; RELAXATION TIME; SILICON; SILICON OXIDES; SOLIDS; SPIN