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Extending the coherence of a quantum dot hybrid qubit

Journal Article · · npj Quantum Information
 [1];  [2];  [3];  [3];  [3];  [3];  [3];  [3];  [4];  [4];  [3];  [3];  [3]
  1. Univ. of Wisconsin, Madison, WI (United States). Dept. of Physics; Department of Physics, University of Wisconsin-Madison
  2. Seoul National Univ. (Korea, Republic of). Dept. of Physics and Astronomy
  3. Univ. of Wisconsin, Madison, WI (United States). Dept. of Physics
  4. Univ. of Wisconsin, Madison, WI (United States). Dept. of Materials Science and Engineering

Identifying and ameliorating dominant sources of decoherence are important steps in understanding and improving quantum systems. Here we show that the free induction decay time (T$$*\atop{2}$$) and the Rabi decay rate (ΓRabi) of the quantum dot hybrid qubit can be increased by more than an order of magnitude by appropriate tuning of the qubit parameters and operating points. Thus, by operating in the spin-like regime of this qubit, and choosing parameters that increase the qubit’s resilience to charge noise (which we show is presently the limiting noise source for this qubit), we achieve a Ramsey decay time T$$*\atop{2}$$ of 177 ns and a Rabi decay time 1/ΓRabi exceeding 1 µs. Furthermore, we find that the slowest ΓRabi is limited by fluctuations in the Rabi frequency induced by charge noise and not by fluctuations in the qubit energy itself.

Research Organization:
Univ. of Wisconsin, Madison, WI (United States)
Sponsoring Organization:
USDOE
Grant/Contract Number:
FG02-03ER46028
OSTI ID:
1378088
Journal Information:
npj Quantum Information, Journal Name: npj Quantum Information Vol. 3; ISSN 2056-6387
Publisher:
Nature Partner JournalsCopyright Statement
Country of Publication:
United States
Language:
English

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Cited By (16)

A silicon metal-oxide-semiconductor electron spin-orbit qubit journal May 2018
Integrated silicon qubit platform with single-spin addressability, exchange control and robust single-shot singlet-triplet readout text January 2017
Gate-reflectometry dispersive readout and coherent control of a spin qubit in silicon text January 2018
Achieving high-fidelity single-qubit gates in a strongly driven charge qubit with 1/f charge noise journal January 2019
Low-frequency spin qubit energy splitting noise in highly purified 28Si/SiGe journal May 2020
The critical role of substrate disorder in valley splitting in Si quantum wells journal June 2018
High-fidelity entangling gates for quantum-dot hybrid qubits based on exchange interactions journal January 2020
Measurements of Capacitive Coupling Within a Quadruple-Quantum-Dot Array journal December 2019
Phonon-induced relaxation and decoherence times of the hybrid qubit in silicon quantum dots journal July 2019
Quadrupolar Exchange-Only Spin Qubit journal October 2018
Low-frequency spin qubit energy splitting noise in highly purified 28Si/SiGe text January 2020
Achieving High-Fidelity Single-Qubit Gates in a Strongly Driven Charge Qubit with $1\!/\!f$ Charge Noise text January 2018
A quadrupolar exchange-only spin qubit text January 2018
Phonon-induced relaxation and decoherence times of the hybrid qubit in silicon quantum dots text January 2019
High-Fidelity Entangling Gates for Quantum-Dot Hybrid Qubits Based on Exchange Interactions text January 2019
Low-frequency spin qubit energy splitting noise in highly purified 28Si/SiGe text January 2020

Figures / Tables (9)


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