Strain and localization effects in InGaAs(N) quantum wells: Tuning the magnetic response
- Departamento de Física, Universidade Federal de São Carlos, 13565-905, São Carlos, São Paulo (Brazil)
- School of Physics and Astronomy, Nottingham Nanotechnology and Nanoscience Centre, University of Nottingham, NG7 2RD Nottingham (United Kingdom)
- Photonics Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology, 41296 Goteborg (Sweden)
- Leibniz-Institute for Crystal Growth, Max-Born-Str. 2, D-12489 Berlin (Germany)
We investigated effects of localization and strain on the optical and magneto-optical properties of diluted nitrogen III–V quantum wells theoretically and experimentally. High-resolution x-ray diffraction, photoluminescence (PL), and magneto-PL measurements under high magnetic fields up to 15 T were performed at low temperatures. Bir-Pikus Hamiltonian formalism was used to study the influence of strain, confinement, and localization effects. The circularly polarized magneto-PL was interpreted considering localization aspects in the valence band ground state. An anomalous behavior of the electron-hole pair magnetic shift was observed at low magnetic fields, ascribed to the increase in the exciton reduced mass due to the negative effective mass of the valence band ground state.
- OSTI ID:
- 22402809
- Journal Information:
- Journal of Applied Physics, Vol. 116, Issue 23; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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