Hanle-effect measurements of spin injection from Mn{sub 5}Ge{sub 3}C{sub 0.8}/Al{sub 2}O{sub 3}-contacts into degenerately doped Ge channels on Si
- Institut für Halbleitertechnik (IHT), Universität Stuttgart, Pfaffenwaldring 47, Stuttgart 70569 (Germany)
- Device Research Laboratory, Department of Electrical Engineering, University of California, Los Angeles, California 90095 (United States)
- Physikalisches Institut, Karlsruhe Institute of Technology, Wolfgang-Gaede-Str. 1, Karlsruhe 76131 (Germany)
- Dpto. Física Aplicada, E. I. Industrial, Universidad de Vigo, Vigo (Spain)
We report electrical spin injection and detection in degenerately doped n-type Ge channels using Mn{sub 5}Ge{sub 3}C{sub 0.8}/Al{sub 2}O{sub 3}/n{sup +}-Ge tunneling contacts for spin injection and detection. The whole structure is integrated on a Si wafer for complementary metal-oxide-semiconductor compatibility. From three-terminal Hanle-effect measurements, we observe a spin accumulation up to 10 K. The spin lifetime is extracted to be 38 ps at T = 4 K using Lorentzian fitting, and the spin diffusion length is estimated to be 367 nm due to the high diffusion coefficient of the highly doped Ge channel.
- OSTI ID:
- 22402412
- Journal Information:
- Applied Physics Letters, Vol. 105, Issue 22; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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