Spin accumulation in Si channels using CoFe/MgO/Si and CoFe/AlO{sub x}/Si tunnel contacts with high quality tunnel barriers prepared by radical-oxygen annealing

Journal Article · Thu May 07 04:00:00 EDT 2015 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4919270· OSTI ID:22409967

Shuto, Y.; Takamura, Y. ^[1]

---

1. Department of Physical Electronics, Tokyo Institute of Technology, Tokyo (Japan)

We investigate spin injection into Si channels using three-terminal spin-accumulation (3T-SA) devices with high-quality CoFe/MgO/n-Si and CoFe/AlO{sub x}/n-Si tunnel spin-injectors whose tunnel barriers are formed by radical oxidation of Mg and Al thin films deposited on Si(100) substrates and successive annealing under radical-oxygen exposure. When the MgO and AlO{sub x} barriers are not treated by the radical-oxygen annealing, the Hanle-effect signals obtained from the 3T-SA devices are closely fitted by a single Lorentz function representing a signal due to trap spins. On the other hand, when the tunnel barriers are annealed under radical-oxygen exposure, the Hanle-effect signals can be accurately fitted by the superposition of a Lorentz function and a non-Lorentz function representing a signal due to accumulated spins in the Si channel. These results suggest that the quality improvement of tunnel barriers treated by radical-oxygen annealing is highly effective for spin-injection into Si channels.

• OSTI ID: 22409967
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 17 Vol. 117; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM
ANNEALING
MAGNESIUM
MAGNESIUM OXIDES
OXIDATION
OXYGEN
SILICON
SPIN
SUBSTRATES
THIN FILMS
TRAPS