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Title: Systematic investigation of effects of exciton–acoustic-phonon scattering on photoluminescence rise times of free excitons in GaAs/Al{sub 0.3}Ga{sub 0.7}As single quantum wells

We have systematically investigated the photoluminescence (PL) dynamics of free excitons in GaAs/Al{sub 0.3}Ga{sub 0.7}As single quantum wells, focusing on the energy relaxation process due to exciton–acoustic-phonon scattering under non-resonant and weak excitation conditions as a function of GaAs-layer thickness from 3.6 to 12.0 nm and temperature from 30 to 50 K. The free exciton characteristics were confirmed by observation that the PL decay time has a linear dependence with temperature. We found that the free exciton PL rise rate, which is the reciprocal of the rise time, is inversely linear with the GaAs-layer thickness and linear with temperature. This is consistent with a reported theoretical study of the exciton–acoustic-phonon scattering rate in the energy relaxation process in quantum wells. Consequently, it is conclusively verified that the PL rise rate is dominated by the exciton–acoustic-phonon scattering rate. In addition, from quantitative analysis of the GaAs-layer thickness and temperature dependences, we suggest that the PL rise rate reflects the number of exciton–acoustic-phonon scattering events.
Authors:
; ;  [1]
  1. Department of Applied Physics, Graduate School of Engineering, Osaka City University, Sugimoto, Sumiyoshi-ku, Osaka 558-8585 (Japan)
Publication Date:
OSTI Identifier:
22399396
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 117; Journal Issue: 13; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM COMPOUNDS; EXCITATION; EXCITONS; GALLIUM ARSENIDES; LAYERS; PHONONS; PHOTOLUMINESCENCE; PULSE RISE TIME; QUANTUM WELLS; RELAXATION; SCATTERING; TEMPERATURE DEPENDENCE; THICKNESS