H irradiation effects on the GaAs-like Raman modes in GaAs{sub 1-x}N{sub x}/GaAs{sub 1-x}N{sub x}:H planar heterostructures

Journal Article · Sun Dec 28 00:00:00 EST 2014 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4905097· OSTI ID:22399189

Geddo, M.; Patrini, M.; Guizzetti, G. ^[1]; Felici, M.; Capizzi, M.; Polimeni, A. ^[2]; Martelli, F. ^[3]; Rubini, S. ^[3]

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1. Dipartimento di Fisica, Università degli studi di Pavia, Via Bassi 6, I-27100 Pavia (Italy)
2. Dipartimento di Fisica, Sapienza Università di Roma, Piazzale A. Moro 2, I-00185 Roma (Italy)
3. Laboratorio Nazionale TASC-IOM-CNR, Area Science Park, S.S. 14, Km. 163.5, 34149 Trieste (Italy)

The GaAs-like longitudinal optical phonon frequency in two hydrogenated GaAs{sub 1-x}N{sub x}/GaAs{sub 1-x}N{sub x}:H microwire heterostructures—with similar N concentration, but different H dose and implantation conditions—has been investigated by micro-Raman mapping. In the case of GaAs{sub 0.991}N{sub 0.009} wires embedded in barriers where GaAs-like properties are recovered through H irradiation, the phonon frequency in the barriers undergoes a blue shift with respect to the wires. In GaAs{sub 0.992}N{sub 0.008} wires embedded in less hydrogenated barriers, the phonon frequency exhibits an opposite behavior (red shift). Strain, disorder, phonon localization effects induced by H-irradiation on the GaAs-like phonon frequency are discussed and related to different types of N-H complexes formed in the hydrogenated barriers. It is shown that the red (blue) character of the frequency shift is related to the dominant N-2H (N-3H) type of complexes. Moreover, for specific experimental conditions, an all-optical determination of the uniaxial strain field is obtained. This may improve the design of recently presented devices that exploit the correlation between uniaxial stress and the degree of polarization of photoluminescence.

• OSTI ID: 22399189
• Journal Information: Journal of Applied Physics, Vol. 116, Issue 24; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
CONCENTRATION RATIO
CORRELATIONS
GALLIUM ARSENIDES
GALLIUM NITRIDES
HETEROJUNCTIONS
HYDROGEN COMPLEXES
HYDROGENATION
IRRADIATION
PHONONS
PHOTOLUMINESCENCE
POLARIZATION
RED SHIFT
STRAINS
STRESSES