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Title: Gate-tunable high mobility remote-doped InSb/In{sub 1−x}Al{sub x}Sb quantum well heterostructures

Gate-tunable high-mobility InSb/In{sub 1−x}Al{sub x}Sb quantum wells (QWs) grown on GaAs substrates are reported. The QW two-dimensional electron gas (2DEG) channel mobility in excess of 200 000 cm{sup 2}/V s is measured at T = 1.8 K. In asymmetrically remote-doped samples with an HfO{sub 2} gate dielectric formed by atomic layer deposition, parallel conduction is eliminated and complete 2DEG channel depletion is reached with minimal hysteresis in gate bias response of the 2DEG electron density. The integer quantum Hall effect with Landau level filling factor down to 1 is observed. A high-transparency non-alloyed Ohmic contact to the 2DEG with contact resistance below 1 Ω·mm is achieved at 1.8 K.
Authors:
; ; ; ; ; ; ; ; ;  [1] ;  [2] ; ;  [3] ; ;  [4] ;  [5]
  1. HRL Laboratories, 3011 Malibu Canyon Rd, Malibu, California 90265 (United States)
  2. Department of Applied Physics, Stanford University, Stanford, California 94305 (United States)
  3. Department of Physics and Astronomy, Purdue University, 525 Northwestern Ave., West Lafayette, Indiana 47907 (United States)
  4. Kavli Institute of Nanoscience, Delft University of Technology, 2600 GA Delft (Netherlands)
  5. Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen (Denmark)
Publication Date:
OSTI Identifier:
22398846
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 14; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; ALUMINIUM COMPOUNDS; CARRIER MOBILITY; CONCENTRATION RATIO; DIELECTRIC MATERIALS; DOPED MATERIALS; ELECTRON DENSITY; ELECTRON GAS; GALLIUM ARSENIDES; HAFNIUM OXIDES; HALL EFFECT; HETEROJUNCTIONS; HYSTERESIS; INDIUM ANTIMONIDES; OPACITY; QUANTUM WELLS; SUBSTRATES; TEMPERATURE DEPENDENCE; TWO-DIMENSIONAL SYSTEMS