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Title: Dramatic enhancement of 1.54 μm emission in Er doped GaN quantum well structures

Erbium (Er) doped III-nitride materials have attracted much attention due to their capability to provide highly thermal stable optical emission in the technologically important as well as eye-safer 1540 nm wavelength window. There is a continued need to exploring effective mechanisms to further improve the quantum efficiency (QE) of the 1.54 μm emission in Er-doped III-nitrides. GaN/AlN multiple quantum wells (MQWs:Er) have been synthesized by metal organic chemical vapor deposition and explored as an effective means to improve the QE of the 1.54 μm emission via carrier confinement and strain engineering. The 1.54 μm emission properties from MQWs:Er were probed by photoluminescence (PL) emission spectroscopy. It was found that the emission intensity from MQWs:Er is 9 times higher than that of GaN:Er epilayers with a comparable Er active layer thickness. The influences of the well and barrier width on the PL emission at 1.54 μm were studied. The results revealed that MQWs:Er consisting of well width between 1 and 1.5 nm and the largest possible barrier width before reaching the critical thickness provide the largest boost in QE of the 1.54 μm emission. These results demonstrate that MQWs:Er provide a basis for efficient photonic devices active at 1.54 μm.
Authors:
 [1] ;  [2] ; ; ;  [3]
  1. Department of Physics, Yarmouk University, Irbid 21163 (Jordan)
  2. Institute of Physics, Polish Academy of Sciences, 02-668 Warsaw (Poland)
  3. Department of Electrical and Computer Engineering, Texas Tech University, Lubbock, Texas 79409 (United States)
Publication Date:
OSTI Identifier:
22398757
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 12; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; ALUMINIUM NITRIDES; CHARGE CARRIERS; CHEMICAL VAPOR DEPOSITION; COMPARATIVE EVALUATIONS; DIFFUSION BARRIERS; DOPED MATERIALS; EMISSION SPECTROSCOPY; ERBIUM; GALLIUM NITRIDES; ORGANOMETALLIC COMPOUNDS; PHOTOLUMINESCENCE; QUANTUM EFFICIENCY; QUANTUM WELLS; STRAINS