Comparison of the optical properties of Er{sup 3+} doped gallium nitride prepared by metalorganic molecular beam epitaxy (MOMBE) and solid source molecular beam epitaxy (SSMBE)

Conference · Sat Jul 01 04:00:00 EDT 2000

OSTI ID:20104628

Hoemmerich, U; Seo, J T; MacKenzie, J D; Abernathy, C R; Birkhahn, R; Steckl, A J; Zavada, J M

The authors report on the luminescence properties of Er doped GaN grown prepared by metalorganic molecular beam epitaxy (MOMBE) and solid-source molecular beam epitaxy (SSMBE) on Si substrates. Both types of samples emitted characteristic 1.54 {micro}m PL resulting from the intra-4f Er{sup 3+} transition {sup 4}I{sub 13/2} {yields} {sup 4}I{sub 15/2}. Under below-gap excitation the samples exhibited very similar 1.54 {micro}m PL intensities. On the contrary, under above-gap excitation GaN:Er (SSMBE) showed {approximately}80 times more intense 1.54 {micro}m PL than GaN:Er (MOMBE). In addition, GaN:Er (SSMBE) also emitted intense green luminescence at 537 nm and 558 nm, which was not observed from GaN:Er (MOMBE). The average lifetime of the green PL was determined to be 10.8 {micro}s at 15 K and 5.5 {micro}s at room temperature. A preliminary lifetime analysis suggests that the decrease in lifetime is mainly due to the strong thermalization between the {sup 2}H{sub 11/2} and {sup 4}S{sub 3/2} excited states. Nonradiative decay processes are expected to only weakly affect the green luminescence.

• Research Organization: Hampton Univ., VA (US)
• OSTI ID: 20104628
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ERBIUM ADDITIONS
EXCITATION
EXPERIMENTAL DATA
GALLIUM NITRIDES
LIFETIME
LUMINESCENCE
MOLECULAR BEAM EPITAXY
OPTICAL PROPERTIES
TEMPERATURE DEPENDENCE