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Title: Magnetotransport in La{sub 0.7}Sr{sub 0.3}MnO{sub 3}/CuCr{sub 2}O{sub 4}/Fe{sub 3}O{sub 4} magnetic junctions

We demonstrate distinct magnetic and resistive switching with junction magnetoresistance up to −6% in magnetic tunnel junctions with a CuCr{sub 2}O{sub 4} barrier. Junction magnetoresistance is inversely related to barrier thickness and reveals a maximum at a finite applied bias that converges to zero bias at low temperatures for all barrier thicknesses. The non-monotonic bias dependence is attributed to a charge gap from the Fe{sub 3}O{sub 4} electrode and possible spin filtering from the spin-split conduction band of the ferrimagnetic CuCr{sub 2}O{sub 4} barrier.
Authors:
;  [1] ;  [2] ;  [1] ;  [2] ;  [1] ;  [2] ;  [1] ; ;  [3]
  1. Department of Materials Science and Engineering, University of California, Berkeley, California 94720 (United States)
  2. (United States)
  3. Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)
Publication Date:
OSTI Identifier:
22395655
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 1; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CHROMATES; COPPER COMPOUNDS; ELECTRIC CONTACTS; ELECTRODES; FERRIMAGNETIC MATERIALS; FERRIMAGNETISM; FERRITES; FILTERS; IRON OXIDES; MAGNETORESISTANCE; SEMICONDUCTOR JUNCTIONS; SPIN; TEMPERATURE DEPENDENCE; THICKNESS; TUNNEL EFFECT