Magnetotransport in La{sub 0.7}Sr{sub 0.3}MnO{sub 3}/CuCr{sub 2}O{sub 4}/Fe{sub 3}O{sub 4} magnetic junctions

Journal Article · Mon Jan 05 00:00:00 EST 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4905533· OSTI ID:22395655

Iwata-Harms, Jodi M.; Suzuki, Yuri ^[1]; Chopdekar, Rajesh V. ^[1]; Wong, Franklin J. ^[1]; Nelson-Cheeseman, Brittany B. ^[1]; Jenkins, Catherine A.; Arenholz, Elke ^[2]

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1. Department of Materials Science and Engineering, University of California, Berkeley, California 94720 (United States)
2. Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)

We demonstrate distinct magnetic and resistive switching with junction magnetoresistance up to −6% in magnetic tunnel junctions with a CuCr{sub 2}O{sub 4} barrier. Junction magnetoresistance is inversely related to barrier thickness and reveals a maximum at a finite applied bias that converges to zero bias at low temperatures for all barrier thicknesses. The non-monotonic bias dependence is attributed to a charge gap from the Fe{sub 3}O{sub 4} electrode and possible spin filtering from the spin-split conduction band of the ferrimagnetic CuCr{sub 2}O{sub 4} barrier.

• OSTI ID: 22395655
• Journal Information: Applied Physics Letters, Vol. 106, Issue 1; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CHROMATES
COPPER COMPOUNDS
ELECTRIC CONTACTS
ELECTRODES
FERRIMAGNETIC MATERIALS
FERRIMAGNETISM
FERRITES
FILTERS
IRON OXIDES
MAGNETORESISTANCE
SEMICONDUCTOR JUNCTIONS
SPIN
TEMPERATURE DEPENDENCE
THICKNESS
TUNNEL EFFECT