High thermal stability and low density variation of carbon-doped Ge{sub 2}Sb{sub 2}Te{sub 5} for phase-change memory application

Journal Article · Mon Dec 15 00:00:00 EST 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4904832· OSTI ID:22395555

Zhou, Wangyang ^[1]; Wu, Liangcai; Zhou, Xilin; Rao, Feng; Song, Zhitang; Yao, Dongning; Yin, Weijun; Song, Sannian; Liu, Bo; Feng, Songlin ^[1]; Qian, Bo ^[2]

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1. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China)
2. Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123 (China)

Carbon-doped Ge{sub 2}Sb{sub 2}Te{sub 5} (GSTC) film has been experimentally studied as a thermal stable material for high temperature applications. The 10-yr data retention temperature is remarkably increased through C doping. Furthermore, GSTC films have better interface properties after annealing at 410 °C for 30 min. The density variation of GSTC film is significantly improved, which is very important to device reliability. X-ray photoelectron spectroscopy results reveal that the thermal stability enhancement of GSTC film attributes to the forming of C-Ge, C-Sb, and C-Te bonds. The perfect thermal stability makes GSTC materials a good candidate in the actual production of phase-change memory.

• OSTI ID: 22395555
• Journal Information: Applied Physics Letters, Vol. 105, Issue 24; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANNEALING
ANTIMONY TELLURIDES
CARBON
CARBON COMPOUNDS
CHEMICAL BONDS
DOPED MATERIALS
GERMANIUM COMPOUNDS
INTERFACES
PHASE STABILITY
RELIABILITY
RETENTION
TEMPERATURE DEPENDENCE
VARIATIONS
X-RAY PHOTOELECTRON SPECTROSCOPY