Phase change behaviors of Zn-doped Ge{sub 2}Sb{sub 2}Te{sub 5} films

Journal Article · Mon Jul 30 00:00:00 EDT 2012 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4742144· OSTI ID:22089326

Guoxiang, Wang; Qiuhua, Nie ^[1]; Xiang, Shen; Jing, Fu; Tiefeng, Xu; Shixun, Dai ^[2]; Wang, R. P. ^[3]; Liangcai, Wu ^[4]

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1. Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083 (China)
2. Faculty of Information Science and Engineering, Ningbo University, Ningbo 315211 (China)
3. Laser Physics Centre, Australian National University, Canberra, ACT 0200 (Australia)
4. Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China)

Zn-doped Ge{sub 2}Sb{sub 2}Te{sub 5} phase-change materials have been investigated for phase change memory applications. Zn{sub 15.16}(Ge{sub 2}Sb{sub 2}Te{sub 5}){sub 84.84} phase change film exhibits a higher crystallization temperature ({approx}258 Degree-Sign C), wider band gap ({approx}0.78 eV), better data retention of 10 years at 167.5 Degree-Sign C, higher crystalline resistance, and faster crystallization speed compared with the conventional Ge{sub 2}Sb{sub 2}Te{sub 5}. The proper Zn atom added into Ge{sub 2}Sb{sub 2}Te{sub 5} serves as a center for suppression of the face-centered-cubic (fcc) phase to hexagonal close-packed (hcp) phase transition, and fcc phase has high thermal stability partially due to the bond recombination among Zn, Sb, and Te atoms.

• OSTI ID: 22089326
• Journal Information: Applied Physics Letters, Vol. 101, Issue 5; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANTIMONY COMPOUNDS
ATOMS
CHEMICAL BONDS
CRYSTALLIZATION
CRYSTAL-PHASE TRANSFORMATIONS
DOPED MATERIALS
ENERGY GAP
FCC LATTICES
GERMANIUM COMPOUNDS
GLASS
HCP LATTICES
INHIBITION
PHASE CHANGE MATERIALS
RECOMBINATION
SEMICONDUCTOR MATERIALS
SOLIDS
STABILITY
TELLURIUM COMPOUNDS
THIN FILMS
ZINC ADDITIONS