Sharp chemical interface in epitaxial Fe{sub 3}O{sub 4} thin films

Journal Article · Mon Dec 15 00:00:00 EST 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4904459· OSTI ID:22395523

Gálvez, S. ^[1]; Salas-Colera, E.; Muñoz-Noval, A.; Castro, G. R. ^[1]; ICMM-CSIC Cantoblanco, E-28049 Madrid ^[2]

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1. SpLine, Spanish CRG Beamline at the European Synchrotron Radiation Facility, B.P. 200, F-38043 Grenoble (France)
2. Spain

Chemically sharp interface was obtained on single phase single oriented Fe{sub 3}O{sub 4} (001) thin film (7 nm) grown on NiO (001) substrate using oxygen assisted molecular beam epitaxy. Refinement of the atomic structure, stoichiometry, and oxygen vacancies were determined by soft and hard x-ray photoelectron spectroscopy, low energy electron diffraction and synchrotron based X-ray reflectivity, and X-ray diffraction. Our results demonstrate an epitaxial growth of the magnetite layer, perfect iron stoichiometry, absence of oxygen vacancies, and the existence of an intermixing free interface. Consistent magnetic and electrical characterizations are also shown.

• OSTI ID: 22395523
• Journal Information: Applied Physics Letters, Vol. 105, Issue 24; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ELECTRON DIFFRACTION
FERRITES
HARD X RADIATION
INTERFACES
IRON
IRON OXIDES
LAYERS
MAGNETITE
MOLECULAR BEAM EPITAXY
NICKEL OXIDES
OXYGEN
PHOTOELECTRON SPECTROSCOPY
REFLECTIVITY
STOICHIOMETRY
SUBSTRATES
THIN FILMS
VACANCIES
X-RAY DIFFRACTION