Temperature and bias-voltage dependence of atomic-layer-deposited HfO{sub 2}-based magnetic tunnel junctions
- Thin Films and Physics of Nanostructures, Bielefeld University, Universitaetsstrasse 25, 33615 Bielefeld (Germany)
- Institute of Applied Physics, Universität Hamburg, Jungiusstrasse 11, 20355 Hamburg (Germany)
- Institute for Solid State Physics, Friedrich-Schiller-University Jena, Max-Wien-Platz 1, 07743 Jena (Germany)
- 4. Physikalisches Institut, Georg-August University Göttingen, Friedrich-Hund-Platz 1, 37077 Göttingen (Germany)
- Thin Films and Physics of Nanostructures, Universitaetsstrasse 25, 33615 Bielefeld, Germany, and Institut für Physik, Johannes Gutenberg Universität Mainz, Staudingerweg 9, 55128 Mainz (Germany)
Magnetic tunnel junctions with HfO{sub 2} tunnel barriers were prepared through a combination of magnetron sputtering and atomic layer deposition. We investigated the tunneling transport behavior, including the tunnel magnetoresistance ratio and the current-voltage characteristics between room temperature and 2 K. Here, we achieved a tunneling magneto resistance ratio of 10.3% at room temperature and 19.3% at 2 K. Furthermore, we studied the bias-voltage and temperature dependencies and compared the results with those of commonly used alumina- and magnesia-based magnetic tunnel junctions. We observed a polycrystalline/amorphous electrode-barrier system via high-resolution transmission electron microscopy.
- OSTI ID:
- 22350804
- Journal Information:
- Applied Physics Letters, Vol. 105, Issue 13; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM OXIDES
CURRENTS
DEPOSITION
DIFFUSION BARRIERS
ELECTRIC CONDUCTIVITY
ELECTRIC POTENTIAL
HAFNIUM OXIDES
LAYERS
MAGNESIUM OXIDES
MAGNETORESISTANCE
MAGNETRONS
POLYCRYSTALS
RESOLUTION
SPUTTERING
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0273-0400 K
TRANSMISSION ELECTRON MICROSCOPY
TUNNEL EFFECT