Large tunneling magnetoresistance effect at high voltage drop for Co-based Heusler alloy/MgO/CoFe junctions

Journal Article · Tue May 01 04:00:00 EDT 2007 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.2711070· OSTI ID:20982863

Rata, A D; Braak, H; Buergler, D E; Schneider, C M ^[1]

---

1. Institute of Solid State Research, Electronic Properties (IFF-9) and cni-Center of Nanoelectronic Systems for Information Technology, Research Center Juelich GmbH, D-52425 Juelich (Germany)

Growth and magnetic characterization of thin films of Co{sub 2}Cr{sub 0.6}Fe{sub 0.4}Al and Co{sub 2}MnSi full-Heusler compounds are investigated. Thin films were deposited by magnetron sputtering at room temperature directly onto oxidized Si wafers. These Heusler films are magnetically very soft and ferromagnetic with Curie temperatures well above room temperature. Polycrystalline Co{sub 2}Cr{sub 0.6}Fe{sub 0.4}Al Heusler films combined with MgO barriers and CoFe counter electrodes are structured to magnetic tunnel junctions and yield almost 50% magnetoresistance at room temperature. The magnetoresistance shows a strong bias dependence with the maximum occurring at a voltage drop well above 1 V. This special feature is accompanied by only a moderate temperature dependence of the tunnel magnetoresistance.

• OSTI ID: 20982863
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 9 Vol. 101; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CHROMIUM ALLOYS
COBALT ALLOYS
CRYSTAL GROWTH
CURIE POINT
DEPOSITION
ELECTRODES
HEUSLER ALLOYS
IRON ALLOYS
MAGNESIUM OXIDES
MAGNETORESISTANCE
POLYCRYSTALS
SILICON ALLOYS
SPUTTERING
SUPERCONDUCTING JUNCTIONS
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0273-0400 K
THIN FILMS
TUNNEL EFFECT
VOLTAGE DROP