Electrothermally driven high-frequency piezoresistive SiC cantilevers for dynamic atomic force microscopy
- LPN, CNRS-UPR20, route de Nozay, 91460 Marcoussis (France)
- Centre de Recherche sur l'Hetero-Epitaxie et ses Applications CNRS, Rue Bernard Gregory, 06560 Valhonne (France)
- NOVASiC, Savoie Technolac, Arche bât 4, BP 267, 73375 Le Bourget du Lac Cedex (France)
- Université François Rabelais, Tours, GREMAN, CNRS-UMR7347, 16 rue Pierre et Marie Curie, BP 7155, 37071 Tours Cedex 2 (France)
- IM2NP-CNRS/Aix-Marseille University, 38 rue Frédéric Joliot-Curie, 13451 Marseille (France)
Cantilevers with resonance frequency ranging from 1 MHz to 100 MHz have been developed for dynamic atomic force microscopy. These sensors are fabricated from 3C-SiC epilayers grown on Si(100) substrates by low pressure chemical vapor deposition. They use an on-chip method both for driving and sensing the displacement of the cantilever. A first gold metallic loop deposited on top of the cantilever is used to drive its oscillation by electrothermal actuation. The sensing of this oscillation is performed by monitoring the resistance of a second Au loop. This metallic piezoresistive detection method has distinct advantages relative to more common semiconductor-based schemes. The optimization, design, fabrication, and characteristics of these cantilevers are discussed.
- OSTI ID:
- 22314564
- Journal Information:
- Journal of Applied Physics, Vol. 116, Issue 5; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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