Note: A silicon-on-insulator microelectromechanical systems probe scanner for on-chip atomic force microscopy

Journal Article · Wed Apr 15 00:00:00 EDT 2015 · Review of Scientific Instruments

DOI:https://doi.org/10.1063/1.4918729· OSTI ID:22392484

Fowler, Anthony G.; Maroufi, Mohammad; Moheimani, S. O. Reza, ^[1]

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1. School of Electrical Engineering and Computer Science, University of Newcastle, Callaghan, NSW 2308 (Australia)

A new microelectromechanical systems-based 2-degree-of-freedom (DoF) scanner with an integrated cantilever for on-chip atomic force microscopy (AFM) is presented. The silicon cantilever features a layer of piezoelectric material to facilitate its use for tapping mode AFM and enable simultaneous deflection sensing. Electrostatic actuators and electrothermal sensors are used to accurately position the cantilever within the x-y plane. Experimental testing shows that the cantilever is able to be scanned over a 10 μm × 10 μm window and that the cantilever achieves a peak-to-peak deflection greater than 400 nm when excited at its resonance frequency of approximately 62 kHz.

• OSTI ID: 22392484
• Journal Information: Review of Scientific Instruments, Vol. 86, Issue 4; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0034-6748
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ACTUATORS
APPROXIMATIONS
ATOMIC FORCE MICROSCOPY
DEGREES OF FREEDOM
KHZ RANGE 01-100
LAYERS
MEMS
PEAKS
PIEZOELECTRICITY
PROBES
RESONANCE
SENSORS
SILICON
TESTING