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Title: Memristive behaviors in Pt/BaTiO{sub 3}/Nb:SrTiO{sub 3} ferroelectric tunnel junctions

We demonstrate memristive behaviors in Pt/BaTiO{sub 3}/Nb:SrTiO{sub 3} metal/ferroelectric/semiconductor ferroelectric tunnel junctions, in which the semiconductor electrode can be switched between the accumulated and the depleted states by polarization reversal in the BaTiO{sub 3} barrier via the ferroelectric field effect. An extra barrier, against electron tunneling, forms in the depleted region of the Nb:SrTiO{sub 3} electrode surface, which together with the ferroelectric barrier itself modulate the tunneling resistance with the change of effective polarization. Continuous resistance modulation over four orders of magnitude is hence achieved by application of programmed voltage pulses with different polarity, amplitude, and repetition numbers, as a result of the development of the extra barrier.
Authors:
 [1] ;  [2] ; ;  [3]
  1. College of Physics, Qingdao University, Qingdao 266071 (China)
  2. (China)
  3. National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, China and Department of Materials Science and Engineering, College of Engineering and Applied Sciences, Nanjing University, Nanjing 210093 (China)
Publication Date:
OSTI Identifier:
22314502
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 5; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; BARIUM COMPOUNDS; CONDUCTOR DEVICES; ELECTRODES; FERROELECTRIC MATERIALS; NIOBIUM; PLATINUM; POLARIZATION; SEMICONDUCTOR MATERIALS; STRONTIUM TITANATES; TITANIUM OXIDES; TUNNEL EFFECT