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Title: Understanding time-resolved processes in atomic-layer etching of ultra-thin Al{sub 2}O{sub 3} film using BCl{sub 3} and Ar neutral beam

We scrutinize time-resolved processes occurring in atomic-layer etching (ALET) of ultra-thin Al{sub 2}O{sub 3} film using BCl{sub 3} gas and Ar neutral beam by employing density functional theory calculations and experimental measurements. BCl{sub 3} gas is found to be preferentially chemisorbed on Al{sub 2}O{sub 3}(100) in trans form with the surface atoms creating O-B and Al-Cl contacts. We disclose that the most likely sequence of etching events involves dominant detachment of Al-associated moieties at early etching stages in good agreement with our concurrent experiments on tracking Al{sub 2}O{sub 3} surface compositional variations during Ar bombardment. In this etching regime, we find that ALET requires half the maximum reaction energy of conventional plasma etching, which greatly increases if the etching sequence changes.
Authors:
;  [1] ;  [2] ;  [2] ;  [3]
  1. Sensor System Research Center, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of)
  2. Department of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, Gyeonggi-do 440-746 (Korea, Republic of)
  3. (SAINT), Sungkyunkwan University, Suwon 440-746 (Korea, Republic of)
Publication Date:
OSTI Identifier:
22311034
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 9; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM OXIDES; BEAMS; BORON CHLORIDES; CHEMISORPTION; DENSITY FUNCTIONAL METHOD; ETCHING; FILMS; LAYERS; PLASMA; SURFACES; TIME RESOLUTION