Optical spin polarization and Hanle effect in GaAsSb: Temperature dependence
- National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083 (China)
Continuous-wave optical orientation spectroscopy and the Hanle effect are used to investigate the optical spin polarization and spin dephasing time (gT{sub s}) in GaAsSb with a Sb concentration of ∼6% as a function of temperature. Optical and spin polarizations up to ∼21% were achieved at ∼120 K, and the scaled spin lifetime gT{sub s} decreased monotonously from ∼1.5 ns at 5 K to ∼20 ps at 200 K. We demonstrate that the spin properties of GaAs could be modified by incorporating a small percentage of Sb into it, as a result of an increase in the spin–orbit interactions.
- OSTI ID:
- 22310949
- Journal Information:
- Applied Physics Letters, Vol. 105, Issue 8; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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