Structural and optical properties of GaAsSb QW heterostructures grown by laser deposition

Journal Article · Thu Jan 15 00:00:00 EST 2015 · Semiconductors

DOI:https://doi.org/10.1134/S1063782615010285· OSTI ID:22470127

Zvonkov, B. N.; Dorokhin, M. V.; Kalentyeva, I. L. ^[1]; Morozov, S. V.; Kryzhkov, D. I. ^[2]; Yunin, P. A. ^[3]

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1. Lobachevsky State University of Nizhni Novgorod, Physico-Technical Research Institute (Russian Federation)
2. Lobachevsky State University of Nizhni Novgorod (Russian Federation)
3. Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)

The possibility of using the laser deposition method to grow crystalline light-emitting structures with GaAsSb/GaAs quantum wells (QWs) is experimentally demonstrated for the first time. The growth temperature of the GaAs{sub 1−x}Sb{sub x} layers is varied within the range 450–550°C; according to X-ray diffraction analyses, the content of antimony reaches x{sub Sb} ≈ 0.37 at a growth temperature of 450°C. Low-temperature (4 K) photoluminescence spectroscopy demonstrates the presence of a peak associated with the GaAsSb/GaAs QW at around 1.3 μm at the minimum laser-light pumping level. The optimal growth temperature T{sub g} = 500°C and arsine flow rate P{sub A} = 2.2 × 10{sup −8} mol/s at which the best emission properties of QWs with x{sub Sb} ∼ 0.17–0.25 are observed at temperatures of 77 and 300 K are determined. It is shown that GaAsSb/GaAs QWs with similar parameters (width and composition) grown by laser deposition at 500°C and metal-organic vapor-phase epitaxy at 580°C have comparable optical quality.

• OSTI ID: 22470127
• Journal Information: Semiconductors, Vol. 49, Issue 1; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
77 NANOSCIENCE AND NANOTECHNOLOGY
ANTIMONY
COMPARATIVE EVALUATIONS
CONCENTRATION RATIO
DEPOSITION
EMISSION SPECTROSCOPY
FLOW RATE
GALLIUM ANTIMONIDES
GALLIUM ARSENIDES
LASER RADIATION
LAYERS
OPTICAL PROPERTIES
ORGANOMETALLIC COMPOUNDS
PHOTOLUMINESCENCE
QUANTUM WELLS
TEMPERATURE DEPENDENCE
VAPOR PHASE EPITAXY
VISIBLE RADIATION
X-RAY DIFFRACTION