Electron spin relaxation time in (110) InGaAs/InAlAs quantum wells
- Graduate School of Materials Science, Nara Institute of Science and Technology 8916-5 Takayama, Ikoma, Nara 630-0192 (Japan)
Electron spin relaxation time τ{sub s} in InGaAs/InAlAs quantum wells (QWs) grown on (110) and (100) InP substrates was investigated by pump-probe transmission measurements. Similar τ{sub s} of 0.83–1.0 ns were measured at room temperature for all the measured (110) and (100) QWs, indicating suppression of the D'yakonov-Perel' spin relaxation mechanism in (110) QWs is not effective in InGaAs/InAlAs QWs as opposed to GaAs/AlGaAs QWs. Contribution of the Bir-Aronov-Pikus mechanism dominant in (110) GaAs/AlGaAs QWs was found to be small in both the (110) and (100) InGaAs/InAlAs QWs from the weak dependences of τ{sub s} on pump intensity at room temperature. These results suggest that the spin relaxation mechanism dominant in InGaAs/InAlAs QWs at a temperature higher than 200 K is the Elliott-Yafet mechanism independent of the crystal orientation among the above three major mechanisms.
- OSTI ID:
- 22308716
- Journal Information:
- Journal of Applied Physics, Vol. 116, Issue 2; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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