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Title: Electron spin relaxation time in (110) InGaAs/InAlAs quantum wells

Electron spin relaxation time τ{sub s} in InGaAs/InAlAs quantum wells (QWs) grown on (110) and (100) InP substrates was investigated by pump-probe transmission measurements. Similar τ{sub s} of 0.83–1.0 ns were measured at room temperature for all the measured (110) and (100) QWs, indicating suppression of the D'yakonov-Perel' spin relaxation mechanism in (110) QWs is not effective in InGaAs/InAlAs QWs as opposed to GaAs/AlGaAs QWs. Contribution of the Bir-Aronov-Pikus mechanism dominant in (110) GaAs/AlGaAs QWs was found to be small in both the (110) and (100) InGaAs/InAlAs QWs from the weak dependences of τ{sub s} on pump intensity at room temperature. These results suggest that the spin relaxation mechanism dominant in InGaAs/InAlAs QWs at a temperature higher than 200 K is the Elliott-Yafet mechanism independent of the crystal orientation among the above three major mechanisms.
Authors:
; ; ;  [1]
  1. Graduate School of Materials Science, Nara Institute of Science and Technology 8916-5 Takayama, Ikoma, Nara 630-0192 (Japan)
Publication Date:
OSTI Identifier:
22308716
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 116; Journal Issue: 2; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM ARSENIDES; CRYSTALS; ELECTRONS; GALLIUM ARSENIDES; INDIUM ARSENIDES; QUANTUM WELLS; RELAXATION TIME; SPIN; SUBSTRATES; TEMPERATURE RANGE 0273-0400 K; TERNARY ALLOY SYSTEMS; TRANSMISSION