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Title: AlGaAs/GaAs photovoltaic converters for high power narrowband radiation

AlGaAs/GaAs-based laser power PV converters intended for operation with high-power (up to 100 W/cm{sup 2}) radiation were fabricated by LPE and MOCVD techniques. Monochromatic (λ = 809 nm) conversion efficiency up to 60% was measured at cells with back surface field and low (x = 0.2) Al concentration 'window'. Modules with a voltage of 4 V and the efficiency of 56% were designed and fabricated.
Authors:
; ; ; ; ; ;  [1] ;  [2]
  1. Ioffe Physical-Technical Institute, 26 Polytechnicheskaya, St. Petersburg, 194021 (Russian Federation)
  2. Ioffe Physical-Technical Institute, 26 Polytechnicheskaya, St. Petersburg, 194021, Russia and Instituto de Energia Solar, Universidad Politecnica de Madrid, Madrid (Spain)
Publication Date:
OSTI Identifier:
22307884
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1616; Journal Issue: 1; Conference: CPV-10: 10. international conference on concentrator photovoltaic systems, Albuquerque, NM (United States), 7-9 Apr 2014; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 14 SOLAR ENERGY; ALUMINIUM ARSENIDES; CHEMICAL VAPOR DEPOSITION; CONCENTRATION RATIO; ELECTRIC POTENTIAL; GALLIUM ARSENIDES; LASER RADIATION; LIQUID PHASE EPITAXY; MONOCHROMATIC RADIATION; OPERATION; PHOTOVOLTAIC EFFECT; SOLAR CELLS; SURFACES