Photovoltaic converters based on GaAs and AlGaAs epitaxial layers on GaAs substrates with developed surface area

Journal Article · Sat Jul 15 04:00:00 EDT 2006 · Semiconductors

DOI:https://doi.org/10.1134/S1063782606070219· OSTI ID:21088502

Arsent'ev, I N; Borkovskaya, O Yu ^[1]; Vinokurov, D A ^[2]; Karimov, A V; Klad'ko, V P; Konakova, R V ^[3]; Konnikov, S G ^[2]; Mamontova, I B ^[3]

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1. National Academy of Sciences of Ukraine, Institute of Semiconductor Physics (Ukraine)
2. Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation)
3. Academy of Sciences of Uzbekistan, Physicotechnical Institute of Scientific Center Physics-Sun (Uzbekistan)

MOCVD and LPE technologies of deposition of GaAs and AlGaAs layers onto (100) GaAs substrates with a developed surface area are developed. Porous GaAs layers and surface microprofiles of dendrite and quasi-grating types were fabricated on these substrates. The quality of layers was determined in comparative studies of the surface morphology and X-ray diffraction. Further, photovoltaic converters based on these layers have been devised. The best parameters among the samples under study were attained in photovoltaic converters based on the layers with the dendrite-type microprofile of substrate, which had the most developed area of the working surface and the dislocation density of 10{sup 4} cm{sup -2}. In particular, at the wavelength of 0.65 {mu}m, the external quantum efficiency of these photovoltaic converters was 150% higher than in the reference samples produced on a smooth surface.

• OSTI ID: 21088502
• Journal Information: Semiconductors, Journal Name: Semiconductors Journal Issue: 7 Vol. 40; ISSN SMICES; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM ARSENIDES
CHEMICAL VAPOR DEPOSITION
DISLOCATIONS
GALLIUM ARSENIDES
LAYERS
LIQUID PHASE EPITAXY
MORPHOLOGY
PHOTOVOLTAIC EFFECT
POROUS MATERIALS
QUANTUM EFFICIENCY
SUBSTRATES
SURFACE AREA
SURFACES
X-RAY DIFFRACTION