Large interface diffusion in endotaxial growth of MnP films on GaP substrates
- Regroupement québécoise sur les matériaux de pointe (RQMP), Département de Génie Physique, Polytechnique Montréal, C.P. 6079, succ. Centre-ville, Montréal, Québec H3C 3A7 (Canada)
The metal organic vapor deposition of MnP films on GaP (100) substrates is shown to have a substantial endotaxial component. A study of the growth time evolution of the endotaxial depths of MnP grains reveals a diffusion-controlled growth with a relatively large diffusion coefficient of Mn in GaP. The value (2.2 ± 1.5) × 10⁻¹⁵ (cm²/s) obtained at 650 °C is at least two orders of magnitude larger than the reported Mn diffusion in bulk GaP. GaP surface mounds provide further indirect evidence that this large diffusion coefficient is concurrent with the out-diffusion of Ga atoms at the growing MnP/GaP interface. No trace of dislocations could be observed at or near this interface, which strongly suggests that Mn diffusion occurs through vacant sites generated by the difference between the crystallographic structures of MnP and GaP.
- OSTI ID:
- 22305746
- Journal Information:
- Journal of Applied Physics, Vol. 116, Issue 13; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Publisher:
- American Institute of Physics (AIP)
- Country of Publication:
- United States
- Language:
- English
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