Endotaxially stabilized B2-FeSi nanodots in Si (100) via ion beam co-sputtering

Journal Article · Mon Apr 21 04:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4872315· OSTI ID:22262565

Cassidy, Cathal; Singh, Vidyadhar; Grammatikopoulos, Panagiotis ^[1]; Kioseoglou, Joseph ^[2]; Lal, Chhagan ^[3]; Sowwan, Mukhles ^[1]

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1. Nanoparticles by Design Unit, Okinawa Institute of Science and Technology (OIST) Graduate University, 1919-1 Onna-Son, Okinawa 904-0495 (Japan)
2. Department of Physics, Aristotle University of Thessaloniki, GR-54124 Thessaloniki (Greece)
3. Department of Physics, University of Rajasthan, Jaipur, Rajasthan 302005 (India)

We report on the formation of embedded B2-FeSi nanodots in [100]-oriented Si substrates, and investigate the crystallographic mechanism underlying the stabilization of this uncommon, bulk-unstable, phase. The nanodots were approximately 10 nm in size, and were formed by iron thin film deposition and subsequent annealing. Cross-sectional transmission electron microscopy, energy loss spectroscopy mapping, and quantitative image simulation and analysis were utilized to identify the phase, strain, and orientational relationship of the nanodots to the host silicon lattice. X-ray photoelectron spectroscopy was utilized to analyze the surface composition and local bonding. Elasticity calculations yielded a nanodot residual strain value of −18%. Geometrical phase analysis graphically pinpointed the positions of misfit dislocations, and clearly showed the presence of pinned (11{sup ¯}1{sup ¯}){sub Si}//(100){sub FeSi}, and unpinned (2{sup ¯}42){sub Si}//(010){sub FeSi}, interfaces. This partial endotaxy in the host silicon lattice was the mechanism that stabilized the B2-FeSi phase.

• OSTI ID: 22262565
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 16 Vol. 104; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
DISLOCATIONS
ION BEAMS
IRON SILICIDES
QUANTUM DOTS
THIN FILMS
TRANSMISSION ELECTRON MICROSCOPY
X-RAY PHOTOELECTRON SPECTROSCOPY