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Title: Low-current-density spin-transfer switching in Gd{sub 22}Fe{sub 78}-MgO magnetic tunnel junction

Magnetization switching of a relatively thick (9 nm) Gd-Fe free layer was achieved with a low spin injection current density of 1.0 × 10{sup 6} A/cm{sup 2} using MgO based magnetic tunnel junction devices, fabricated for light modulators. At about 560 × 560 nm{sup 2} in size, the devices exhibited a tunneling magnetoresistance ratio of 7%. This low-current switching is mainly attributed to thermally assisted spin-transfer switching in consequence of its thermal magnetic behavior arising from Joule heating.
Authors:
; ; ; ; ; ;  [1] ;  [2]
  1. Science and Technology Research Laboratories, Japan Broadcasting Corporation (NHK), Kinuta, Setagaya, Tokyo 157-8510 (Japan)
  2. Department of Green and Sustainable Chemistry, Tokyo Denki University, Adachi, Tokyo 120-8551 (Japan)
Publication Date:
OSTI Identifier:
22304373
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 20; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CURRENT DENSITY; CURRENTS; GADOLINIUM ALLOYS; HETEROJUNCTIONS; INJECTION; IRON ALLOYS; JOULE HEATING; MAGNESIUM OXIDES; MAGNETIC PROPERTIES; MAGNETIZATION; MAGNETORESISTANCE; NANOSTRUCTURES; SPIN; TUNNEL EFFECT