Low-current-density spin-transfer switching in Gd{sub 22}Fe{sub 78}-MgO magnetic tunnel junction

Journal Article · Wed May 28 00:00:00 EDT 2014 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4878916· OSTI ID:22304373

Kinjo, Hidekazu; Machida, Kenji; Aoshima, Ken-ichi; Kato, Daisuke; Kuga, Kiyoshi; Kikuchi, Hiroshi; Shimidzu, Naoki ^[1]; Matsui, Koichi ^[2]

---

1. Science and Technology Research Laboratories, Japan Broadcasting Corporation (NHK), Kinuta, Setagaya, Tokyo 157-8510 (Japan)
2. Department of Green and Sustainable Chemistry, Tokyo Denki University, Adachi, Tokyo 120-8551 (Japan)

Magnetization switching of a relatively thick (9 nm) Gd-Fe free layer was achieved with a low spin injection current density of 1.0 × 10{sup 6} A/cm{sup 2} using MgO based magnetic tunnel junction devices, fabricated for light modulators. At about 560 × 560 nm{sup 2} in size, the devices exhibited a tunneling magnetoresistance ratio of 7%. This low-current switching is mainly attributed to thermally assisted spin-transfer switching in consequence of its thermal magnetic behavior arising from Joule heating.

• OSTI ID: 22304373
• Journal Information: Journal of Applied Physics, Vol. 115, Issue 20; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CURRENT DENSITY
CURRENTS
GADOLINIUM ALLOYS
HETEROJUNCTIONS
INJECTION
IRON ALLOYS
JOULE HEATING
MAGNESIUM OXIDES
MAGNETIC PROPERTIES
MAGNETIZATION
MAGNETORESISTANCE
NANOSTRUCTURES
SPIN
TUNNEL EFFECT