Reducing spin-torque switching current by incorporating an ultra-thin Ta layer with CoFeB free layer in magnetic tunnel junctions
- Data Storage Institute, A*STAR (Agency for Science Technology and Research), DSI Building, 5 Engineering Drive 1, Singapore 117608 (Singapore)
We studied the spin torque switching in dual MgO layer based magnetic tunnel junctions (MTJs) by incorporating an ultra-thin (0.5 nm) Ta layer at the CoFeB free layer/top MgO layer interface. The Ta incorporated MTJ showed a significant reduction (∼30%) in critical switching current density (J{sub C0} ) as compared to that of the control MTJ whilst maintaining the same tunneling magnetoresistance as well as thermal stability. The reduction of J{sub C0} can be attributed to the perpendicular magnetic anisotropy arising from the incorporation of an ultrathin Ta layer with the MgO|CoFeB structure. This scheme of reducing J{sub C0} without degrading other properties may contribute to the development of spin-transfer-torque magnetic random access memory for low power applications.
- OSTI ID:
- 22395540
- Journal Information:
- Applied Physics Letters, Vol. 105, Issue 24; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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