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Title: AlGaN composition dependence of the band offsets for epitaxial Gd{sub 2}O{sub 3}/Al{sub x}Ga{sub 1−x}N (0 ≤ x ≤ 0.67) heterostructures

Gd{sub 2}O{sub 3} films were prepared on (0001)-oriented Al{sub x}Ga{sub 1−x}N (0 ≤ x ≤ 0.67) thin film substrates via reactive molecular-beam epitaxy. X-ray diffraction revealed that these films possessed the cubic bixbyite structure regardless of substrate composition and were all 111-oriented with in-plane rotations to account for the symmetry difference between the oxide film and nitride epilayer. Valence band offsets were characterized by X-ray photoelectron spectroscopy and were determined to be 0.41 ± 0.02 eV, 0.17 ± 0.02 eV, and 0.06 ± 0.03 eV at the Gd{sub 2}O{sub 3}/Al{sub x}Ga{sub 1−x}N interfaces for x = 0, 0.28, and 0.67, respectively.
Authors:
; ; ; ;  [1]
  1. Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)
Publication Date:
OSTI Identifier:
22303944
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 1; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM COMPOUNDS; EV RANGE; GADOLINIUM OXIDES; GALLIUM NITRIDES; INTERFACES; MOLECULAR BEAM EPITAXY; ROTATION; SUBSTRATES; SYMMETRY; THIN FILMS; X-RAY DIFFRACTION; X-RAY PHOTOELECTRON SPECTROSCOPY