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Title: Conductance control at the LaAlO{sub 3}/SrTiO{sub 3}-interface by a multiferroic BiFeO{sub 3} ad-layer

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.4886405· OSTI ID:22303899
; ; ;  [1]
  1. Institut für Physik, Johannes Gutenberg Universität Mainz, Staudingerweg 7, D-55128 Mainz (Germany)

Multilayered BiFeO{sub 3} (BFO)/LaAlO{sub 3} (LAO) thin film samples were fabricated on SrTiO{sub 3} (STO) substrates by pulsed laser deposition. In this work, the ferroelectric polarization of a multiferroic BFO ad-layer on top of the quasi-two-dimensional electron gas (2DEG) at the LAO/STO interface is used to manipulate the conductivity of the quasi-2DEG. By microstructuring the conductive area of the LAO/STO-interface, a four-point geometry for the measurement of the resistivity was achieved. Piezo force microscopy allows for imaging and poling the spontaneous ferroelectric polarization of the multiferroic layer. The resistance changes showed a linear dependence on the area scanned and a hysteretic behavior with respect to the voltages applied in the scanning process. This is evidence for the ferroelectric polarization of the multiferroic causing the resistance changes. Coupling the antiferromagnetic BFO layer to another ferromagnetic layer could enable a magnetic field control of the conductance of the quasi-2DEG at the LAO/STO interface.

OSTI ID:
22303899
Journal Information:
Applied Physics Letters, Vol. 104, Issue 26; Other Information: (c) 2014 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
Country of Publication:
United States
Language:
English