skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Ultrabroad stimulated emission from quantum well laser

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.4885366· OSTI ID:22303832
; ; ; ; ; ; ;  [1];  [2];  [3]
  1. Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Science, Beijing 100083 (China)
  2. School of Engineering, University of Glasgow, Glasgow G12 8LT (United Kingdom)
  3. State Key Lab for Mesoscopic Physics and School of Physics, Peking University, Beijing, 100871 (China)

Observation of ultrabroad stimulated emission from a simplex quantum well based laser at the center wavelength of 1.06 μm is reported. With increased injection current, spectrum as broad as 38 nm and a pulsed output power of ∼50 mW have been measured. The experiments show evidence of an unexplored broad emission regime in the InGaAs/GaAs quantum well material system, which still needs theoretical modeling and further analysis.

OSTI ID:
22303832
Journal Information:
Applied Physics Letters, Vol. 104, Issue 25; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
Country of Publication:
United States
Language:
English