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Title: Rapid low-temperature processing of metal-oxide thin film transistors with combined far ultraviolet and thermal annealing

We propose a combined far ultraviolet (FUV) and thermal annealing method of metal-nitrate-based precursor solutions that allows efficient conversion of the precursor to metal-oxide semiconductor (indium zinc oxide, IZO, and indium oxide, In{sub 2}O{sub 3}) both at low-temperature and in short processing time. The combined annealing method enables a reduction of more than 100 °C in annealing temperature when compared to thermally annealed reference thin-film transistor (TFT) devices of similar performance. Amorphous IZO films annealed at 250 °C with FUV for 5 min yield enhancement-mode TFTs with saturation mobility of ∼1 cm{sup 2}/(V·s). Amorphous In{sub 2}O{sub 3} films annealed for 15 min with FUV at temperatures of 180 °C and 200 °C yield TFTs with low-hysteresis and saturation mobility of 3.2 cm{sup 2}/(V·s) and 7.5 cm{sup 2}/(V·s), respectively. The precursor condensation process is clarified with x-ray photoelectron spectroscopy measurements. Introducing the FUV irradiation at 160 nm expedites the condensation process via in situ hydroxyl radical generation that results in the rapid formation of a continuous metal-oxygen-metal structure in the film. The results of this paper are relevant in order to upscale printed electronics fabrication to production-scale roll-to-roll environments.
Authors:
; ; ; ; ;  [1] ; ; ;  [2]
  1. VTT Technical Research Centre of Finland, P.O. Box 1000, FI-02044 VTT (Finland)
  2. Materials Research Laboratory, Department of Physics and Astronomy, University of Turku, FI-20014 Turku (Finland)
Publication Date:
OSTI Identifier:
22303540
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 11; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANNEALING; CONVERSION; EQUIPMENT; FABRICATION; FAR ULTRAVIOLET RADIATION; HYDROXYL RADICALS; INDIUM OXIDES; MOBILITY; MOS TRANSISTORS; NITRATES; OXYGEN; SATURATION; SEMICONDUCTOR MATERIALS; THIN FILMS; X-RAY PHOTOELECTRON SPECTROSCOPY; ZINC OXIDES