The electrical conduction properties of poly-crystalline indium-zinc-oxide film

Journal Article · Fri Feb 28 04:00:00 EST 2014 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4865504· OSTI ID:22278005

Tomai, S. ^[1]; Terai, K.; Junke, T.; Tsuruma, Y.; Ebata, K.; Yano, K. ^[1]; Uraoka, Y. ^[2]

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1. Advanced Technology Research Laboratories, Idemitsu Kosan Co., Ltd., 1280 Kami-izumi, Sodegaura, Chiba 2990293 (Japan)
2. Graduate School of Material Science, Nara Institute of Science and Technology, 8916-5, Takayama-cho, Ikoma, Nara 6300192 (Japan)

We have developed a high-mobility and high-uniform oxide semiconductor using poly-crystalline semiconductor material composed of indium and zinc (p-IZO). A typical conduction mechanism of p-IZO film was demonstrated by the grain boundary scattering model as in polycrystalline silicon. The grain boundary potential of the 2-h-annealed IZO film was calculated to be 100 meV, which was comparable to that of the polycrystalline silicon. However, the p-IZO thin film transistor (TFT) measurement shows rather uniform characteristics. It denotes that the mobility deterioration around the grain boundaries is lower than the case for low-temperature polycrystalline silicon. This assertion was made based on the difference of the mobility between the polycrystalline and amorphous IZO film being much smaller than is the case for silicon transistors. Therefore, we conclude that the p-IZO is a promising material for a TFT channel, which realizes high drift mobility and uniformity simultaneously.

• OSTI ID: 22278005
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 8 Vol. 115; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANNEALING
CARRIER MOBILITY
COMPARATIVE EVALUATIONS
ELECTRIC CONDUCTIVITY
GRAIN BOUNDARIES
INDIUM COMPOUNDS
POLYCRYSTALS
SEMICONDUCTOR MATERIALS
SILICON
THIN FILMS
TRANSISTORS
ZINC OXIDES