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Title: In situ variations of carrier decay and proton induced luminescence characteristics in polycrystalline CdS

Evolution of the microwave-probed photoconductivity transients and of the proton induced luminescence has simultaneously been examined in polycrystalline CdS layers evaporated in vacuum during exposure to a 1.6 MeV proton beam. The decrease of the intensity of luminescence peaked at 510 and 709 nm wavelengths and of values of the effective carrier lifetime has been correlated in dependence of proton irradiation fluence. The defect introduction rate has been evaluated by the comparative analysis of the laser and proton beam induced luminescence. The difference of a carrier pair generation mechanism inherent for light and for a proton beam has been revealed.
Authors:
; ; ; ; ; ; ;  [1] ;  [2] ; ;  [3]
  1. Institute of Applied Research, Vilnius University, Vilnius LT-10222 (Lithuania)
  2. Odessa I.I.Mechnikov National University, Odessa 65082 (Ukraine)
  3. Centre for Physical Sciences and Technology, Vilnius LT-02300 (Lithuania)
Publication Date:
OSTI Identifier:
22303426
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 24; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CADMIUM SULFIDES; CARRIER LIFETIME; CARRIERS; DECAY; DEFECTS; IRRADIATION; LASER RADIATION; LAYERS; LUMINESCENCE; MEV RANGE 01-10; MICROWAVE RADIATION; PHOTOCONDUCTIVITY; POLYCRYSTALS; PROTON BEAMS; TRANSIENTS; VISIBLE RADIATION; WAVELENGTHS