Band gaps and internal electric fields in semipolar short period InN/GaN superlattices
- Institute of High Pressures Physics, UNIPRESS, 01-142 Warsaw (Poland)
- Department of Physics and Astronomy, Aarhus University, DK-8000 Aarhus C (Denmark)
The electronic structures and internal electric fields of semipolar short-period mInN/nGaN superlattices (SLs) have been calculated for several compositions (m, n). Two types of SL are considered, (112{sup ¯}2) and (202{sup ¯}1), corresponding to growth along the wurtzite s2 and s6 directions, respectively. The results are compared to similar calculations for polar SLs (grown in the c-direction) and nonpolar SLs (grown in the a- and m-directions). The calculated band gaps for the semipolar SLs lie between those calculated for the nonpolar and polar SLs: For s2-SLs they fall slightly below the band gaps of a-plane SLs, whereas for s6-SLs they are considerably smaller.
- OSTI ID:
- 22300025
- Journal Information:
- Applied Physics Letters, Vol. 104, Issue 23; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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