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Title: Experimental demonstration of hot-carrier photo-current in an InGaAs quantum well solar cell

An unambiguous observation of hot-carrier photocurrent from an InGaAs single quantum well solar cell is reported. Simultaneous photo-current and photoluminescence measurements were performed for incident power density 0.04–3 kW cm{sup −2}, lattice temperature 10 K, and forward bias 1.2 V. An order of magnitude photocurrent increase was observed for non-equilibrium hot-carrier temperatures >35 K. This photocurrent activation temperature is consistent with that of equilibrium carriers in a lattice at elevated temperature. The observed hot-carrier photo-current is extracted from the well over an energy selective GaAs barrier, thus integrating two essential components of a hot-carrier solar cell: a hot-carrier absorber and an energy selective contact.
Authors:
;  [1] ; ;  [2]
  1. U.S. Naval Research Laboratory, 4555 Overlook Ave. SW., Washington, DC 20375 (United States)
  2. Imperial College London, London SW7 2AZ (United Kingdom)
Publication Date:
OSTI Identifier:
22300006
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 23; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CARRIERS; DIFFUSION BARRIERS; EQUILIBRIUM; GALLIUM ARSENIDES; INDIUM ARSENIDES; PHOTOEMISSION; PHOTOLUMINESCENCE; POWER DENSITY; QUANTUM WELLS; SOLAR CELLS; TEMPERATURE RANGE 0013-0065 K