Auger-generated hot carrier current in photo-excited forward biased single quantum well blue light emitting diodes

Espenlaub, Andrew C.; Alhassan, Abdullah I.; Nakamura, Shuji; Weisbuch, Claude; Speck, James S.

doi:10.1063/1.5021475

Title: Auger-generated hot carrier current in photo-excited forward biased single quantum well blue light emitting diodes

Journal Article · Tue Apr 03 00:00:00 EDT 2018 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.5021475· OSTI ID:1510951

^[1]; Alhassan, Abdullah I. ^[1]; Nakamura, Shuji ^[1]; Weisbuch, Claude ^[2]; Speck, James S. ^[1]

Univ. of California, Santa Barbara, CA (United States). Materials Dept.
Univ. of California, Santa Barbara, CA (United States). Materials Dept.; Ecole Polytechnique, Palaiseau (France). Lab. of Condensed Matter Physics

We report on measurements of the photo-modulated current-voltage and electroluminescence characteristics of forward biased single quantum well, blue InGaN/GaN light emitting diodes with and without electron blocking layers. Low intensity resonant optical excitation of the quantum well was observed to induce an additional forward current at constant forward diode bias, in contrast to the usual sense of the photocurrent in photodiodes and solar cells, as well as an increased electroluminescence intensity. The presence of an electron blocking layer only slightly decreased the magnitude of the photo-induced current at constant forward bias. Photo-modulation at constant forward diode current resulted in a reduced diode bias under optical excitation. We argue that this decrease in diode bias at constant current and the increase in forward diode current at constant applied bias can only be due to additional hot carriers being ejected from the quantum well as a result of an increased Auger recombination rate within the quantum well.

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Research Organization:: Univ. of California, Santa Barbara, CA (United States)

Sponsoring Organization:: USDOE Office of Energy Efficiency and Renewable Energy (EERE), Energy Efficiency Office. Building Technologies Office

Grant/Contract Number:: EE0007096

OSTI ID:: 1510951

Alternate ID(s):: OSTI ID: 1635234

Journal Information:: Applied Physics Letters, Vol. 112, Issue 14; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 9 works

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Cited By (2)

Identification of low-energy peaks in electron emission spectroscopy of InGaN/GaN light-emitting diodes Myers, Daniel J.; Gelžinytė, Kristina; Ho, Wan Ying Journal of Applied Physics, Vol. 124, Issue 5 https://doi.org/10.1063/1.5030208	journal	August 2018
Evidence of trap-assisted Auger recombination in low radiative efficiency MBE-grown III-nitride LEDs Espenlaub, Andrew C.; Myers, Daniel J.; Young, Erin C. Journal of Applied Physics, Vol. 126, Issue 18 https://doi.org/10.1063/1.5096773	journal	November 2019

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36 MATERIALS SCIENCE
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