GaAs-based high temperature electrically pumped polariton laser

Journal Article · Mon Jun 09 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4883477· OSTI ID:22299990

Baten, Md Zunaid; Bhattacharya, Pallab; Frost, Thomas; Deshpande, Saniya; Das, Ayan ^[1]; Lubyshev, Dimitri; Fastenau, Joel M.; Liu, Amy W. K. ^[2]

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1. Center for Photonic and Multiscale Nanomaterials, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109 (United States)
2. IQE, Inc., 119 Technology Drive, Bethlehem, Pennsylvania 18015 (United States)

Strong coupling effects and polariton lasing are observed at 155 K with an edge-emitting GaAs-based microcavity diode with a single Al{sub 0.31}Ga{sub 0.69}As/Al{sub 0.41}Ga{sub 0.59}As quantum well as the emitter. The threshold for polariton lasing is observed at 90 A/cm{sup 2}, accompanied by a reduction of the emission linewidth to 0.85 meV and a blueshift of the emission wavelength by 0.89 meV. Polariton lasing is confirmed by the observation of a polariton population redistribution in momentum space and spatial coherence. Conventional photon lasing is recorded in the same device at higher pump powers.

• OSTI ID: 22299990
• Journal Information: Applied Physics Letters, Vol. 104, Issue 23; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM COMPOUNDS
EMISSION
GALLIUM ARSENIDES
LASERS
PHOTONS
PUMPING
QUANTUM WELLS
SEMICONDUCTOR LASERS
STRONG-COUPLING MODEL
TEMPERATURE RANGE 0400-1000 K
WAVELENGTHS