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Title: GaAs-based high temperature electrically pumped polariton laser

Strong coupling effects and polariton lasing are observed at 155 K with an edge-emitting GaAs-based microcavity diode with a single Al{sub 0.31}Ga{sub 0.69}As/Al{sub 0.41}Ga{sub 0.59}As quantum well as the emitter. The threshold for polariton lasing is observed at 90 A/cm{sup 2}, accompanied by a reduction of the emission linewidth to 0.85 meV and a blueshift of the emission wavelength by 0.89 meV. Polariton lasing is confirmed by the observation of a polariton population redistribution in momentum space and spatial coherence. Conventional photon lasing is recorded in the same device at higher pump powers.
Authors:
; ; ; ;  [1] ; ; ;  [2]
  1. Center for Photonic and Multiscale Nanomaterials, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109 (United States)
  2. IQE, Inc., 119 Technology Drive, Bethlehem, Pennsylvania 18015 (United States)
Publication Date:
OSTI Identifier:
22299990
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 23; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM COMPOUNDS; EMISSION; GALLIUM ARSENIDES; LASERS; PHOTONS; PUMPING; QUANTUM WELLS; SEMICONDUCTOR LASERS; STRONG-COUPLING MODEL; TEMPERATURE RANGE 0400-1000 K; WAVELENGTHS