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Title: Acceptor levels in ZnMgO:N probed by deep level optical spectroscopy

A combination of deep level optical spectroscopy and lighted capacitance voltage profiling has been used to analyze the effect of N into the energy levels close to the valence band of Zn{sub 0.9}Mg{sub 0.1}O. Three energy levels at E{sub V} + 0.47 eV, E{sub V} + 0.35 eV, and E{sub V} + 0.16 eV are observed in all films with concentrations in the range of 10{sup 15}–10{sup 18} cm{sup −3}. The two shallowest traps at E{sub V} + 0.35 eV and E{sub V} + 0.16 eV have very large concentrations that scale with the N exposure and are thus potential acceptor levels. In order to correctly quantify the deep level concentrations, a metal-insulator-semiconductor model has been invoked, explaining well the resulting capacitance-voltage curves.
Authors:
; ;  [1] ; ; ;  [2]
  1. ISOM and Dpto. Ingeniería Electrónica, Universidad Politécnica de Madrid, Ciudad Universitaria s/n, 28040 Madrid (Spain)
  2. Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Hamamatsu, Shizuoka 432-8011 (Japan)
Publication Date:
OSTI Identifier:
22293094
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 8; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CAPACITANCE; CONCENTRATION RATIO; ELECTRIC POTENTIAL; ELECTRICAL INSULATORS; ENERGY LEVELS; MAGNESIUM OXIDES; METALS; SEMICONDUCTOR MATERIALS; SPECTROSCOPY; THIN FILMS; TRAPPING; VISIBLE RADIATION; ZINC COMPOUNDS