Acceptor levels in ZnMgO:N probed by deep level optical spectroscopy
- ISOM and Dpto. Ingeniería Electrónica, Universidad Politécnica de Madrid, Ciudad Universitaria s/n, 28040 Madrid (Spain)
- Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Hamamatsu, Shizuoka 432-8011 (Japan)
A combination of deep level optical spectroscopy and lighted capacitance voltage profiling has been used to analyze the effect of N into the energy levels close to the valence band of Zn{sub 0.9}Mg{sub 0.1}O. Three energy levels at E{sub V} + 0.47 eV, E{sub V} + 0.35 eV, and E{sub V} + 0.16 eV are observed in all films with concentrations in the range of 10{sup 15}–10{sup 18} cm{sup −3}. The two shallowest traps at E{sub V} + 0.35 eV and E{sub V} + 0.16 eV have very large concentrations that scale with the N exposure and are thus potential acceptor levels. In order to correctly quantify the deep level concentrations, a metal-insulator-semiconductor model has been invoked, explaining well the resulting capacitance-voltage curves.
- OSTI ID:
- 22293094
- Journal Information:
- Applied Physics Letters, Vol. 104, Issue 8; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
Similar Records
Deep acceptor states of platinum and iridium in 4H-silicon carbide
Characterization of majority and minority carrier deep levels in p-type GaN:Mg grown by molecular beam epitaxy using deep level optical spectroscopy