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Title: Hysteretic electrical transport in BaTiO{sub 3}/Ba{sub 1−x}Sr{sub x}TiO{sub 3}/Ge heterostructures

We present electrical transport measurements of heterostructures comprised of BaTiO{sub 3} and Ba{sub 1−x}Sr{sub x}TiO{sub 3} epitaxially grown on Ge. Sr alloying imparts compressive strain to the BaTiO{sub 3}, which enables the thermal expansion mismatch between BaTiO{sub 3} and Ge to be overcome to achieve c-axis oriented growth. The conduction bands of BaTiO{sub 3} and Ba{sub 1−x}Sr{sub x}TiO{sub 3} are nearly aligned with the conduction band of Ge, which facilitates electron transport. Electrical transport measurements through the dielectric stack exhibit rectifying behavior and hysteresis, where the latter is consistent with ferroelectric switching.
Authors:
; ;  [1] ;  [1] ;  [2]
  1. Department of Applied Physics and Center for Research on Interface Structures and Phenomena, Yale University, 15 Prospect Street, New Haven, Connecticut 06520-8284 (United States)
  2. (United States)
Publication Date:
OSTI Identifier:
22283156
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 6; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; BARIUM COMPOUNDS; ELECTRIC CONDUCTIVITY; ELECTRONIC STRUCTURE; ELECTRONS; EPITAXY; FERROELECTRIC MATERIALS; GERMANIUM; HETEROJUNCTIONS; HYSTERESIS; STRAINS; STRONTIUM COMPOUNDS; THERMAL EXPANSION; TITANATES