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Title: Excess carrier lifetimes in Ge layers on Si

The excess charge carrier lifetimes in Ge layers grown on Si or germanium-on-insulator are measured by synchrotron based pump-probe transmission spectroscopy. We observe that the lifetimes do not strongly depend on growth parameters and annealing procedure, but on the doping profile. The defect layer at the Ge/Si interface is found to be the main non-radiative recombination channel. Therefore, the longest lifetimes in Ge/Si (2.6 ns) are achieved in sufficiently thick Ge layers with a built-in field, which repels electrons from the Ge/Si interface. Longer lifetimes (5.3 ns) are obtained in overgrown germanium-on-insulator due to the absence of the defective interface.
Authors:
;  [1] ; ; ;  [2] ;  [1] ;  [3] ;  [4] ;  [5] ;  [6]
  1. Laboratory for Micro- and Nanotechnology, Paul Scherrer Institut, 5232 Villigen PSI (Switzerland)
  2. L-NESS, Dipartimento di Fisica del Politecnico di Milano, Via Anzani 42, 22100 Como (Italy)
  3. (Switzerland)
  4. (SCOPEM), ETH Zurich, 8093 Zurich (Switzerland)
  5. Laboratory for Nanometallurgy, Department of Materials Science, ETH Zurich, 8093 Zurich (Switzerland)
  6. Institute for Quantum Electronics, ETH Zurich, 8093 Zurich (Switzerland)
Publication Date:
OSTI Identifier:
22283151
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 6; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ABSORPTION SPECTROSCOPY; ANNEALING; CARRIER LIFETIME; CHARGE CARRIERS; ELECTRONS; GERMANIUM; HETEROJUNCTIONS; INTERFACES; LAYERS; RECOMBINATION; SILICON