High Mg-content wurtzite MgZnO alloys and their application in deep-ultraviolet light-emitters pumped by accelerated electrons

Journal Article · Mon Jan 20 00:00:00 EST 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4862789· OSTI ID:22280583

Ni, Pei-Nan ^[1]; Shan, Chong-Xin; Li, Bing-Hui; Shen, De-Zhen ^[1]

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1. State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033 (China)

High Mg-content single-phase wurtzite MgZnO alloys with a bandgap of 4.35 eV have been obtained on sapphire substrate by introducing a composition-gradient Mg{sub x}Zn{sub 1−x}O buffer layer. By employing the accelerated electrons obtained in a solid-state structure as an excitation source, an emission at around 285 nm, which is originated from the near-band-edge emission of the Mg{sub 0.51}Zn{sub 0.49}O active layer, has been observed. The results reported in this paper may provide a promising route to high performance deep-ultraviolet light-emitting devices by bypassing the challenging doping issues of wide bandgap semiconductors.

• OSTI ID: 22280583
• Journal Information: Applied Physics Letters, Vol. 104, Issue 3; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CUBIC LATTICES
ELECTRONIC STRUCTURE
ELECTRONS
ENERGY GAP
EXCITATION
FAR ULTRAVIOLET RADIATION
LAYERS
MAGNESIUM COMPOUNDS
PHOTON EMISSION
SAPPHIRE
SEMICONDUCTOR MATERIALS
SOLIDS
SUBSTRATES
ZINC OXIDES