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Title: High Mg-content wurtzite MgZnO alloys and their application in deep-ultraviolet light-emitters pumped by accelerated electrons

High Mg-content single-phase wurtzite MgZnO alloys with a bandgap of 4.35 eV have been obtained on sapphire substrate by introducing a composition-gradient Mg{sub x}Zn{sub 1−x}O buffer layer. By employing the accelerated electrons obtained in a solid-state structure as an excitation source, an emission at around 285 nm, which is originated from the near-band-edge emission of the Mg{sub 0.51}Zn{sub 0.49}O active layer, has been observed. The results reported in this paper may provide a promising route to high performance deep-ultraviolet light-emitting devices by bypassing the challenging doping issues of wide bandgap semiconductors.
Authors:
 [1] ;  [2] ; ; ;  [1]
  1. State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033 (China)
  2. (China)
Publication Date:
OSTI Identifier:
22280583
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 3; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CUBIC LATTICES; ELECTRONIC STRUCTURE; ELECTRONS; ENERGY GAP; EXCITATION; FAR ULTRAVIOLET RADIATION; LAYERS; MAGNESIUM COMPOUNDS; PHOTON EMISSION; SAPPHIRE; SEMICONDUCTOR MATERIALS; SOLIDS; SUBSTRATES; ZINC OXIDES