Interface engineering of high-Mg-content MgZnO/BeO/Si for p-n heterojunction solar-blind ultraviolet photodetectors

Journal Article · Mon May 30 00:00:00 EDT 2011 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3595342· OSTI ID:21518465

Liang, H L; Mei, Z X; Zhang, Q H; Gu, L; Liang, S; Hou, Y N; Ye, D Q; Gu, C Z; Yu, R C; Du, X L ^[1]

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1. Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China)

High-quality wurtzite MgZnO film was deposited on Si(111) substrate via a delicate interface engineering using BeO, by which solar-blind ultraviolet photodetectors were fabricated on the n-MgZnO(0001)/p-Si(111) heterojunction. A thin Be layer was deposited on clean Si surface with subsequent in situ oxidation processes, which provides an excellent template for high-Mg-content MgZnO growth. The interface controlling significantly improves the device performance, as the photodetector demonstrates a sharp cutoff wavelength at 280 nm, consistent with the optical band gap of the epilayer. Our experimental results promise potential applications of this technique in integration of solar-blind ultraviolet optoelectronic device with Si microelectronic technologies.

• OSTI ID: 21518465
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 22 Vol. 98; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALKALINE EARTH METAL COMPOUNDS
BERYLLIUM COMPOUNDS
BERYLLIUM OXIDES
CHALCOGENIDES
CHEMICAL REACTIONS
CRYSTAL GROWTH METHODS
ELECTROMAGNETIC RADIATION
ELEMENTS
EPITAXY
EQUIPMENT
FILMS
HETEROJUNCTIONS
INTERFACES
LAYERS
MAGNESIUM COMPOUNDS
MATERIALS
MOLECULAR BEAM EPITAXY
OXIDATION
OXIDES
OXYGEN COMPOUNDS
P-N JUNCTIONS
PHOTODETECTORS
RADIATIONS
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR MATERIALS
SEMIMETALS
SILICON
SUBSTRATES
SURFACES
ULTRAVIOLET RADIATION
WAVELENGTHS
ZINC COMPOUNDS