Demonstration of InAsBi photoresponse beyond 3.5 μm

Journal Article · Mon Apr 28 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4873403· OSTI ID:22280503

Bastiman, F.; White, B.; Richards, R.; Mendes, D.; David, J. P. R.; Tan, C. H. ^[1]

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1. Department of Electronic and Electrical Engineering, The University of Sheffield, Sir Frederick Mappin Building, Mappin Street, Sheffield S1 3JD (United Kingdom)

An Indium Arsenide Bismide photodiode has been grown, fabricated, and characterized to evaluate its performance in the Mid Wave Infrared region of the spectrum. Spectral response from the diode has been obtained up to a diode temperature of 225 K. At this temperature, the diode has a cut off wavelength of 3.95 μm, compared to 3.41 μm in a reference Indium Arsenide diode, indicating that Bismuth has been incorporated to reduce the band gap of Indium Arsenide by 75 meV. Similar band gap reduction was deduced from the cut off wavelength comparison at 77 K. From the dark current data, shunt resistance values of 8 and 39 Ω at temperatures of 77 and 290 K, respectively, were obtained in our photodiode.

• OSTI ID: 22280503
• Journal Information: Applied Physics Letters, Vol. 104, Issue 17; Other Information: (c) 2014 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ARSENIC
BAND THEORY
BISMUTH
COMPARATIVE EVALUATIONS
ENERGY GAP
INDIUM