Characterization of InGaN/GaN quantum well growth using monochromated valence electron energy loss spectroscopy

Journal Article · Tue Jan 21 00:00:00 EST 2014 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4861179· OSTI ID:22275752

Birch, J.; Hultman, L.; Persson, P. O. Å. ^[1]; Lundskog, A.; Forsberg, U.; Janzén, E. ^[2]

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1. Thin Film Physics Division, Department of Physics, Chemistry and Biology (IFM), Linköping University, SE-581 83 Linköping (Sweden)
2. Semiconductor Materials Division, Department of Physics, Chemistry and Biology (IFM), Linköping University, SE-581 83 Linköping (Sweden)

The early stages of InGaN/GaN quantum well growth for In-reduced conditions have been investigated for varying thickness and composition of the wells. The structures were studied by monochromated scanning transmission electron microscopy–valence electron energy loss spectroscopy spectrum imaging at high spatial resolution. It is found that beyond a critical well thickness and composition, quantum dots (width >20 nm) are formed inside the well. These are buried by compositionally graded InGaN, which is formed as GaN is grown while residual In is incorporated into the growing structure. It is proposed that these dots act as carrier localization centers inside the quantum wells.

• OSTI ID: 22275752
• Journal Information: Journal of Applied Physics, Vol. 115, Issue 3; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
77 NANOSCIENCE AND NANOTECHNOLOGY
CRYSTAL GROWTH
ELECTRON SPECTRA
ELECTRONS
ENERGY-LOSS SPECTROSCOPY
GALLIUM NITRIDES
INDIUM COMPOUNDS
INTERFACES
QUANTUM DOTS
QUANTUM WELLS
SCANNING ELECTRON MICROSCOPY
SPATIAL RESOLUTION
THICKNESS
TRANSMISSION ELECTRON MICROSCOPY
VALENCE